Faculty of Science and Engineering
Department of Electrical and Electronic Engineering
Ph.D. in Electrical and Electronic Engineering, (BUET)
M.Sc. in Electrical and Electronic Engineering, (BUET)
B.Sc. in Electrical and Electronic Engineering, (BUET)
F. Ferdous is currently working as Associate Professor and Head in the Dept. of Electrical and Electronic Engineering in City University. Before this she had been the faculty member of Electrical and Electronic Engineering Dept. in International Islamic University Chittagong for fifteen years. F. Ferdous received Ph.D. in Power Electronics from BUET. Before this she earned M.Sc. Engineering and B.Sc. Engineering in EEE from BUET. Her fields of interests are in Switch Mode Power Supply, High efficiency LED Driver, PFC driver and Power management in integrated Circuits.
• Associate Professor & Head, Dept. of EEE, City University, From 8th July,2023 to till to date.
• From Lecturer to Associate Professor, Dept. of EEE, International Islamic University Chittagong, From 31st April 2001 to 7th July,2023.
Switch Mode Power Supply
High efficiency LED Driver
PFC LED driver and
Power management in integrated Circuits.
1. Design Optimization of an Efficient Bicolor LED Driving System, F. Ferdous, A.B.M. H. Rashid,
Electronics 2022, 11, 3984.
2. Design of a High-Performance AC-DC LED Driver Based on SEPIC Topology, F. Ferdous, A.B.M.H. Rashid, International Journal of Power Electronics and Drive System (IJPEDS), Vol 12, No.2, pp.870-885, June 2021.
3. Design of a detector circuit in the visible region by using LED, Q. Huda, F. Ferdous, J. F. Khan and K. Tahera, Design of a detector circuit in the visible region by using LED, Q. Huda, F. Ferdous, J. F. Khan and K. Tahera
4. Toward Islamization of Science and Technology, Ferdous, F., & Uddin, M. A., IIUC Studies, 9, 233–242.https://doi.org/10.3329/iiucs.v9i0.24029
5. Scientific Research; Instructions from the Holy Quran, Uddin, M. A., & Ferdous, F. IIUC Studies, 9, 225–232. https://doi.org/10.3329/iiucs.v9i0.24028
6. A semi-Analytical Drain Current Deflection Model for the Symmetric Pocket Implanted n-MOSFET using Lorentz Force Analysis, M. H. Bhuyan, F. Ferdous, and Q. D. M. Khosru,, International Journal of Electronics, Communications, and Electrical Engineering (IJECE), ISSN: 2277-7040, vol. 3, issue 2, February 2013, pp. 35-47
7. Carrier Conduction Time Delay Model of the Pocket Implanted Nano Scale n-MOSFET, M. H. Bhuyan, F. Ferdous, and Q. D. M. Khosru, Journal of Bangladesh Electronics Society, ISSN: 1816-1510, vol. 12, no 1-2, June-December 2012, pp. 67-74.
8. A Scientific Approach for Poverty Alleviation, S. Parvin, F. Ferdous, IIUCIC 2014
Conference Papers
1. Effects of Pocket Profile Parameters on Carrier Conduction Time Delay in Pocket Implanted Nano
Scale n-MOSFET, M. H. Bhuyan, F. Ferdous, and Q. D. M. Khosru Proceedings of the National Conference on Electronics and ICT for National Development organized by the Bangladesh Electronics Society, Dhaka, Bangladesh, 3-4 October 2012, pp. 253-258.
2. Carrier Diffusion Time Delay of Pocket Implanted Nano Scale n-MOSFET, F. Ferdous, M. H. Bhuyan, and Q. D. M. Khosru, Electrical and Computer Engineering (ICECE), Dhaka, 20-22 December 2012, pp. 603-606.
3. Temperature Effects on Sub threshold Current of Pocket Implanted Nano-Scale n-MOSFET, M. H. Bhuyan, F. Ferdous, and Q. D. M. Khosru, Proceedings of the International Conference on Electrical and Computer Engineering (ICECE), Dhaka, 20-22 December 2012, pp. 599-602.
4. A Threshold Voltage Model for sub-100nm Pocket Implanted MOSFET, M. H. Bhuyan, F. Ferdous, and Q. D. M. Khosru, Proceedings of the International Conference on Electrical and Computer Engineering, Dhaka, 19-21 December 2006, pp. 522-525.